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profet ? bts 432 e2 data sheet 1 of 14 2010-jan-26 smart highside power switch features ? load dump and reverse battery protection 1 ) ? clamp of negative voltage at output ? short-circuit protection ? current limitation ? thermal shutdown ? diagnostic feedback ? open load detection in on-state ? cmos compatible input ? e lectro s tatic d ischarge ( esd ) protection ? loss of ground and loss of v bb protection 2) ? overvoltage protection ? undervoltage and overvoltage shutdown with auto- restart and hysteresis ? green product (rohs compliant) ? aec qualified application ? c compatible power switch with diagnostic feedback for 12 v and 24 v dc grounded loads ? all types of resistive, inductive and capacitve loads ? replaces electromechanical relays and discrete circuits general description n channel vertical power fet with charge pump, ground referenced cmos compatible input and diagnostic feedback, integrated in smart sipmos ? chip on chip technology. providing protective functions. + v bb in st signal gnd esd profet ? out gnd logic voltage sensor voltage source open load detection short circuit detection charge pump level shifter temperature sensor rectifier limit for unclamped ind. loads gate protection current limit 2 4 1 3 5 load gnd load v logic overvoltage protection r bb 1) no external components required, reverse load current limited by connected load. 2) additional external diode requi red for charged inductive loads product summary v load dump 80 v v bb - v out avalanche clamp 58 v v bb (operation) 4.5 ... 42 v v bb (reverse) -32 v r on 38 m ? i l(scp) 44 a i l(scr) 35 a i l(iso) 11 a pg-to220-5-11 pg-to263-5-2 5 standard 1 5 smd
profet ? bts 432 e2 data sheet 2 2010-jan-26 pin symbol function 1 gnd logic ground 2 in input, activates the power switch in case of logical high signal 3 v bb positive power supply voltage, the tab is shorted to this pin 4 st diagnostic feedback, low on failure 5 out (load, l) output to the load maximum ratings at t j = 25 c unless otherwise specified parameter symbol values unit supply voltage (overvoltage protection see page 3) v bb 63 v load dump protection v loaddump = u a + v s , u a = 13.5 v r i = 2 ? , r l = 1.1 ? , t d = 200 ms, in= low or high v s 3 ) 66.5 v load current (short-circuit current, see page 4) i l self-limited a operating temperature range storage temperature range t j t stg -40 ...+150 -55 ...+150 c power dissipation (dc) p tot 125 w inductive load switch-off energy dissipation, single pulse t j =150 c: e as 1.7 j electrostatic disc harge capability (esd) (human body model) v esd 2.0 kv input voltage (dc) v in -0.5 ... +6 v current through input pin (dc) current through status pin (dc) see internal circuit diagrams page 6... i in i st 5.0 5.0 ma thermal resistanc e chip - case: junction - ambient (free air): r thjc r thja 1 75 k/w smd version, device on pcb 4) : typ. 33 3) v s is setup without dut connected to the generator per iso 7637-1 and din 40839 4 ) device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for v bb connection. pcb is vertical without blown air.
profet ? bts 432 e2 data sheet 3 2010-jan-26 electrical characteristics parameter and conditions symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max load switching capabilities and characteristics on-state resistance (pin 3 to 5) i l = 2 a t j =25 c: t j =150 c: r on -- 30 55 38 70 m ? nominal load current (pin 3 to 5) iso proposal: v on = 0.5 v, t c = 85 c i l(iso) 9 11 -- a output current (pin 5 ) while gnd disconnected or gnd pulled up, v in = 0, see diagram page 7, t j =-40...+150c i l(gndhigh) -- -- 1 ma turn-on time to 90% v out : turn-off time to 10% v out : r l = 12 ? , t j =-40...+150c t on t off 50 10 160 -- 300 80 s slew rate on 10 to 30% v out , r l = 12 ? , t j =-40...+150c d v /dt on 0.4 -- 2.5 v/ s slew rate off 70 to 40% v out , r l = 12 ? , t j =-40...+150c -d v /dt off 1 -- 5 v/ s operating parameters operating voltage 5 ) t j =-40...+150c: v bb(on) 4.5 -- 42 v undervoltage shutdown t j =-40...+150c: v bb(under) 2.4 -- 4.5 v undervoltage restart t j =-40...+150c: v bb(u rst) -- -- 4.5 v undervoltage restart of charge pump see diagram page 12 t j =-40...+150c: v bb(ucp) -- 6.5 7.5 v undervoltage hysteresis ? v bb(under) = v bb(u rst) - v bb(under) ? v bb(under) -- 0.2 -- v overvoltage shutdown t j =-40...+150c: v bb(over) 42 -- 52 v overvoltage restart t j =-40...+150c: v bb(o rst) 42 -- -- v overvoltage hysteresis t j =-40...+150c: ? v bb(over) -- 0.2 -- v overvoltage protection 6 ) t j =-40c: i bb =40 ma t j =25...+150c: v bb(az) 60 63 -- 67 -- v standby current (pin 3) t j =-40...+25c : v in =0 t j =150c: i bb(off) -- -- 12 18 25 60 a leakage output current (included in i bb(off) ) v in =0 i l(off) -- 6 -- a operating current (pin 1) 7) , v in =5 v i gnd -- 1.1 -- ma 5 ) at supply voltage increase up to v bb = 6.5 v typ without charge pump, v out v bb - 2 v 6) see also v on(cl) in table of protection functions and circ uit diagram page 7. meassured without load . 7 ) add i st , if i st > 0, add i in , if v in >5.5 v
profet ? bts 432 e2 parameter and conditions symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max data sheet 4 2010-jan-26 protection functions 8) initial peak short circuit current limit (pin 3 to 5) 9 ) , ( max 400 s if v on > v on(sc) ) i l(scp) t j =-40c: t j =25c: t j =+150c: -- -- 24 -- 44 -- 74 -- -- a repetitive short circuit current limit i l(scr) t j = t jt (see timing diagrams, page 10) 22 35 -- a short circuit shutdown delay after input pos. slope v on > v on(sc) , t j =-40..+150c: min value valid only, if input "low" time exceeds 30 s t d(sc) 80 -- 400 s output clamp (inductive load switch off) at v out = v bb ? v on(cl) , i l = 30 ma v on(cl) -- 58 -- v short circuit shutdown detection voltage (pin 3 to 5) v on(sc) -- 8.3 -- v thermal overload trip temperature t jt 150 -- -- c thermal hysteresis ? t jt -- 10 -- k inductive load switch-off energy dissipation 10) , t j start = 150 c, single pulse v bb = 12 v: v bb = 24 v: e as e load12 e load24 -- -- 1.7 1.3 1.0 j reverse battery (pin 3 to 1) 11 ) - v bb -- -- 32 v integrated resistor in v bb line r bb -- 120 -- ? diagnostic characteristics open load detection current t j =-40 c : (on-condition) t j =25..150c: i l (ol) 2 2 -- -- 900 750 ma 8 ) integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as "outside" normal operating range. protection functions are not designed for continuous repetitive operation. 9 ) short circuit current limit for max. duration of 400 s, prior to shutdown (see t d(sc) page 4) 10) while demagnetizing load inductance, dissipated energy in profet is e as = v on(cl) * i l (t) dt, approx. e as = 1 / 2 * l * i 2 l * ( v on(cl) v on(cl) - v bb ), see diagram page 8. 11 ) reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. reverse current i gnd of 0.3 a at v bb = -32 v through the logic heats up the device. time allowed under these condition is dependent on the size of the heatsink. reverse i gnd can be reduced by an additional external gnd-resistor (150 ? ). input and status currents have to be limited (see max. ratings page 2 and circuit page 7).
profet ? bts 432 e2 parameter and conditions symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max data sheet 5 2010-jan-26 input and status feedback 12 ) input turn-on threshold voltage t j =-40..+150c: v in(t+) 1.5 -- 2.4 v input turn-off threshold voltage t j =-40..+150c: v in(t-) 1.0 -- -- v input threshold hysteresis ? v in(t) -- 0.5 -- v off state input current (pin 2) v in = 0.4 v: i in(off) 1 -- 30 a on state input current (pin 2) v in = 3.5 v: i in(on) 10 25 50 a status invalid after positive input slope (short circuit) t j =-40 ... +150c: t d(st sc) 80 200 400 s status invalid after positive input slope (open load) t j =-40 ... +150c: t d(st) 350 -- 1600 s status output (open drain) zener limit voltage t j =-40...+150c, i st = +1.6 ma: st low voltage t j =-40...+150c, i st = +1.6 ma: v st(high) v st(low) 5.4 -- 6.1 -- -- 0.4 v 12) if a ground resistor r gnd is used, add the voltage drop across this resistor.
profet ? bts 432 e2 data sheet 6 2010-jan-26 truth table input- output status level level 432e2 normal operation l h l h h h open load l h 13 ) h h l short circuit to gnd l h l l h l short circuit to v bb l h h h h h (l 14 ) overtem- perature l h l l l l under- voltage l h l l h h overvoltage l h l l h h l = "low" level h = "high" level 13 ) power transistor off, high impedance 14 ) low resistance short v bb to output may be detected by no-load-detection terms profet v in st out gnd bb v st v in i st i in v bb i bb i l v out i gnd v on 1 2 4 3 5 r gnd input circuit (esd protection) in gnd i r zd zd i i i1 i2 esd- zd i1 6.1 v typ., esd zener diodes are not designed for continuous current
profet ? bts 432 e2 data sheet 7 2010-jan-26 status output st gnd esd- zd +5v r st(on) esd-zener diode: 6.1 v typ., max 5 ma; r st(on) < 250 ? at 1.6 ma, esd zener diodes are not designed for continuous current short circuit detection fault condition: v on > 8.3 v typ.; in high short circuit detection logic unit + v bb out v on inductive and overvoltage output clamp + v bb out gnd v z v on v on clamped to 58 v typ. overvolt. and reverse batt. protection + v bb v out in st bb r signal gnd logic profet v z r gnd gnd in r st r r bb = 120 ? typ . , v z +r bb *40 ma = 67 v typ., add r gnd , r in , r st for extended protection open-load detection on-state diagnostic condition: v on < r on * i l(ol) ; in high open load detection logic unit + v bb out on v on gnd disconnect profet v in st out gnd bb v bb 1 2 4 3 5 v in v st v gnd any kind of load. in case of input=high is v out v in - v in(t+) . due to v gnd >0, no v st = low signal available.
profet ? bts 432 e2 data sheet 8 2010-jan-26 gnd disconnect with gnd pull up profet v in st out gnd bb v bb 1 2 4 3 5 v gnd v in v st any kind of load. if v gnd > v in - v in(t+) device stays off due to v gnd >0, no v st = low signal available. v bb disconnect with charged inductive load profet v in st out gnd bb v bb 1 2 4 3 5 high profet v in st out gnd bb v bb 1 2 4 3 5 high inductive load switch-off energy dissipation profet v in st out gnd bb = e e e e as bb l r e load energy dissipated in profet e as = e bb + e l - e r . e load < e l , e l = 1 / 2 * l * i 2 l
profet ? bts 432 e2 data sheet 9 2010-jan-26 options overview all versions: high-side switch, input prot ection, esd protection, load dump and reverse battery protection , pr otection against loss of ground type bts 432e2 logic version e overtemperature protection t j >150 c, latch function 15 ) 16 ) t j >150 c, with auto-restart on cooling x short-circuit to gnd protection switches off when v on >8.3 v typ. 15) (when first turned on after approx. 200 s) x open load detection in off-state with sensing current 30 a typ. in on-state with sensing voltage drop across power transistor x undervoltage shutdown with auto restart x overvoltage shutdown with auto restart x status feedback for overtemperature short circuit to gnd short to v bb open load undervoltage overvoltage x x - 17) x - - status output type cmos open drain x output negative voltage transient limit (fast inductive load switch off) to v bb - v on(cl) x load current limit high level (can handle loads with high inrush currents) medium level low level (better protection of application) x 15 ) latch except when v bb - v out < v on(sc) after shutdown. in most cases v out = 0 v after shutdown ( v out 0 v only if forced externally). so the device remains latched unless v bb < v on(sc) (see page 4). no latch between turn on and t d(sc) . 16) with latch function. reseted by a) input low, b) undervoltage, c) overvoltage 17 ) low resistance short v bb to output may be detected by no-load-detection
profet ? bts 432 e2 data sheet 10 2010-jan-26 timing diagrams figure 1a: v bb turn on: in v out t v bb st open drain a a t d(bb in) in case of too early v in =high the device may not turn on (curve a) t d(bb in) approx. 150 s figure 2a: switching a lamp, in st out l t v i figure 2b: switching an inductive load in st l t v i *) out t d(st) i l(ol) *) if the time constant of load is too large, open-load-status may occur figure 3a: turn on into short circuit, in st out l t v i t d(sc) t d(sc) approx. 200 s if v bb - v out > 8.3 v typ.
profet ? bts 432 e2 data sheet 11 2010-jan-26 figure 3b: turn on into overload, in st l t i l(scr) i i l(scp) heating up may require several milliseconds , v bb - v out < 8.3 v typ. figure 3c: short circuit while on: in st out l t v i **) **) current peak approx. 20 s figure 4a: overtemperature: reset if t j < t jt in st out j t v t figure 5a: open load: detection in on-state, turn on/off to open load in st out l t v i open t d(st)
profet ? bts 432 e2 data sheet 12 2010-jan-26 figure 5b: open load: detection in on-state, open load occurs in on-state in st out l t v i open normal normal t d(st ol1) t d(ol st2) t d(st ol1) = tbd s typ., t d(st ol2) = tbd s typ figure 6a: undervoltage: in v out t v bb st open drain v v bb(under) bb(u rst) bb(u cp) v figure 6b: undervoltage restart of charge pump v on [v] bb(under) v v bb(u rst) v bb(over) v bb(o rst) v bb(u cp) off on off v on(cl) v bb v on v bb [v] charge pump starts at v bb(ucp) =6.5 v typ. figure 7a: overvoltage: in v out t v bb st on(cl) v v bb(over) v bb(o rst)
profet? bts 432 e2 data sheet 13 2010-jan-26 package and ordering code all dimensions in mm pg-to220-5-11 bts 432 e2 a a 0.25 m 9.9 0.2 2.8 1) 15.65 0.3 12.95 0...0.15 0.1 1.27 4.4 9.25 0.2 0.05 c 0.2 17 0.3 8.5 1) 10 0.2 3.7 -0.15 c 0.5 0.1 0.3 8.6 10.2 0.3 0.4 3.9 0.4 8.4 3.7 0.3 5 x 0.1 0.8 1.7 4 x 2.4 0.3 1.6 all metal surfaces tin plated, except area of cut. typical 1) 0...0.3 smd pg-to263-5-2 bts432e2 e3062a b a 0.25 m 0.2 gpt09062 10 8.5 1) (15) 0.2 9.25 0.3 1 0...0.15 5 x 0.8 0.1 0.1 1.27 4.4 b 0.5 0.1 0.3 2.7 4.7 0.5 0.3 1.3 2.4 1.7 0...0.3 a 1) 7.55 4 x all metal surfaces tin plated, except area of cut. metal surface min. x = 7.25, y = 6.9 typical 1) 0.1 b 0.1 0.05 8? max. green product to meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. green products are rohs-compliant (i.e pb- free finish on leads and suitable for pb-free so ldering according to ipc/jedec j-std-020). revision history version date changes rev. 1.1 2010-01-26 page 13: package drawing for pg-to220-5-11 corrected. rev. 1.0 2009-11-12 rohs-compliant version of bts432e2 removal of straight lead package variant e3043 page 1, page 13: rohs compliance statement and green product feature added page 1, page 13: change to rohs compliant packages; pg-to220-5-11 for standard (staggered) variant; pg-to263-5-2 for e3062a variant. page 2: thermal resistance junction to ambient for smd version set to typically 33k/w. page 2: pin marking removed. page 6, 9: discontinued variants removed from truth table & options overview. legal disclaimer updated
profet? bts 432 e2 data sheet 14 2010-jan-26 published by infineon technologies ag 81726 munich, germany ? 2010 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, in fineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, wa rranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery term s and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for info rmation on the types in question, please contact the neares t infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to a ssume that the health of the user or other persons may be endangered.

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